Summary: A discrete power device product engineer with certain work experience, responsible fthe development of new discrete devices (such as SiC、GaN、SGT、SJ etc.), covering from target specification setting to large-scale production stage. The job responsibilities include testing plan design, product characterization verification reliability assessment, improvement of product yield, resolution of various production related issues, continuous quality improvement. 具備一定工作經驗的分立功率器件產品工程師，負責分立器件（SiC、GaN、SGT、SJ等）新產品的開發工作，涵蓋從目標規格設定到大規模量產階段。工作內容包括測試計劃設計、產品特性化驗證和可靠性鑒定、產品良率的提升、生產相關的各類問題的解決以及持續的質量改進。 RESPONSIBILITIES: 1. Co-work with device design engineer, marketing engineer to finish device requirement analysis, competitanalysis, construction analysis, build up the product development target plan. Product types include not limited to SiC, GaN, SGT, SJ etc. 與器件設計工程師, 市場工程師共同完成器件設計需求分析、競爭對手分析、結構分析等，制定產品開發目標和計劃。產品類型包括但不限于SiC、GaN、SGT、SJ等。 2. Collaborate with testing engineers to develop device testing plans schemes, complete testing verification.協同測試工程師制定器件測試計劃和測試方案，完成測試驗證。 3. Responsible ffollowing up on the fab packaging of new products throughout the process, analyzing, identifying, addressing various issues during the product preparation process. 負責全程跟進新產品的流片、封裝，并分析、識別、處理產品制備過程中的各類問題。 4. Support product characterization, collaborate with design, application engineer to write the datasheet specifications. 完成產品特性驗證，與設計、應用工程師合作編寫數據表規范。 5. Complete product reliability testing continuously promote product yield improvement.完成產品的可靠性測試并持續推進產品的良率改善。 6. Collaborate with internal team fengineering sample support delivery. 協同內部團隊，確保工程樣品的按時交付； 7. Engage in solving all issues meet internal external to improve the product quality across the product lifetime. 介入解決產品生命周期中面臨的各種內部或外部問題，以提升產品質量； 8. Support on products subcon (fab/bumping/assembly/test etc.) transfer. 參與產品外包工廠(晶圓代工/凸點代工/封裝/測試等)的遷移。 REQUIREMENTS: 1. Masters students majoring in microelectronics related fields, with at least two years of work experience in domestic international power device semiconductcompanies preferred. 微電子及相關專業碩士研究生，有國內、國際功率器件半導體大廠工作兩年以上經歷者優先。 2. NPI experience of SiC, GaN, SGT MOS etc. products development is specially preferred. 有SiC、GaN、SGT MOS等產品開發NPI經驗者尤佳。 3. Familiar with discrete power device product characterization qualification (ESD/LU/HTRB/HTGB/H3TRB/IOL etc.). 熟悉分立功率器件的特性化驗證和可靠性鑒定(ESD/LU/HTRB/HTGB/H3TRB/IOL etc.). 4. Strong experience in managing R&D projects, strong communication coordination skills, excellent sense of responsibility teamwork spirit. 有較強的研發項目的管理經驗，溝通協調能力強，責任心及團隊合作精神優秀。 5. Experience of low yield analysis quality issue solving fnew products. 具備低良率數據分析和質量相關問題的處理經驗； 6. Experience of managing sub-contractors at different locations. 具備與各地外包商協作的經驗； 7. Proficient in the use of various test instruments, including but not limited to semiconductcurve tracer, oscilloscope, discrete tester, etc. 精通各種測試儀器的使用，包括但不限于晶體管特性圖示儀，示波器，分立器件測試機等； 8. Good communication coordination skills, ability to withstpressure, strong sense of responsibility execution ability. 有良好的溝通協調能力，抗壓能力，工作責任心和執行力佳。 9. Good English reading, writing, listening, speaking skills, can smoothly communicate with foreign colleagues. 良好的英語讀、寫、聽、說能力，能與外國同事順暢溝通。